IRF7807D2PbF - International Rectifier

IRF7807D2PbF MOSFET / SCHOTTKY DIODE

The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s.

Features

(Max Values) VDS RDS(on) Qg QSW Qoss IRF7807D2 30V 25mΩ 14nC 5.2nC 21.6nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Schottky and Body Diode 25°C Average ForwardCurrent„ 70°C Junction & Storage Temperature Range Symbol V DS VGS ID IDM PD IF (AV) TJ, TSTG Max. 30 ±12 8.3 6.6 66 2.5 1.6 3.7 2.3
  –55 to 150 Units V A W A °C Thermal Resistance Parameter Maximum Junction-to-Ambientƒ www.irf.com RθJA Max. 50 Units °C/W 1 10/7/04 IRF7807.