IRF7807APbF - International Rectifier

IRF7807APbF HEXFET Chip-Set for DC-DC Converters

These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF7807 devices provides the best cost/ performance soluti.

Features

IRF7807 IRF7807A Vds 30V 30V Rds(on) 25mΩ 25mΩ Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) Pulsed Drain Current 70°C Power Dissipation 25°C 70°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed source Current Symbol VDS VGS I D IDM PD TJ, TSTG I S ISM IRF7807 IRF7807A 30 ±12 8.3 8.3 6.6 6.6 66 66 2.5 1.6
  –55 to 150 2.5 2.5 66 66 Units V A W °C A Thermal Resistance Parameter Maximum Junction-to-Ambi.