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IRF7807D2PbF |
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| Part Number | IRF7807D2PbF |
| Manufacturer | International Rectifier |
| Description | The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power ... |
| Features |
(Max Values)
VDS RDS(on) Qg QSW Qoss
IRF7807D2 30V
25mΩ 14nC 5.2nC 21.6nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS ≥ 4.5V) Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Schottky and Body Diode
25°C
Average ForwardCurrent
70°C
Junction & Storage Temperature Range
Symbol V
DS
VGS ID
IDM PD
IF (AV)
TJ, TSTG
Max. 30 ±12 8.3 6.6 66 2.5 1.6 3.7 2.3
–55 to 150 Units V A W A °C Thermal Resistance Parameter Maximum Junction-to-Ambient www.irf.com RθJA Max. 50 Units °C/W 1 10/7/04 IRF7807... |
| Document |
 IRF7807D2PbF Data Sheet
PDF 103.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF7807D2 |
International Rectifier |
MOSFET |
|
| 2 | IRF7807D1 |
International Rectifier |
MOSFET |
|
| 3 | IRF7807D1PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRF7807 |
International Rectifier |
N-Channel Power MOSFET |
|
| 5 | IRF7807A |
International Rectifier |
N-Channel Power MOSFET |
|