IRF7807D1PBF International Rectifier HEXFET Power MOSFET Datasheet, en stock, prix

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IRF7807D1PBF

International Rectifier
IRF7807D1PBF
IRF7807D1PBF IRF7807D1PBF
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Part Number IRF7807D1PBF
Manufacturer International Rectifier
Description The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power M...
Features (Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC Junction & Storage Temperature Range RθJA www.irf.com 1 5/5/04 IRF7807D1PbF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Drain-Source Leakage Current* Gate-Source Leakage Current* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) Output Charge* Gate Resistance V(BR)DSS RDS(on) 1.0 90 7.2 +/- 100 10.5 12 2.1 0.76 2.9 3.66 15.3 1.2 5.2 18.4 Ω ...

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