IRF7807D1PBF |
Part Number | IRF7807D1PBF |
Manufacturer | International Rectifier |
Description | The FETKY™ family of Co-Pack HEXFET®MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power M... |
Features |
(Max Values)
IRF7807D1
VDS RDS(on) Qg Qsw Qoss
30V 25mΩ 14nC 5.2nC 18.4nC
Junction & Storage Temperature Range
RθJA
www.irf.com
1
5/5/04
IRF7807D1PbF
Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Drain-Source Leakage Current* Gate-Source Leakage Current* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) Output Charge* Gate Resistance V(BR)DSS RDS(on) 1.0 90 7.2 +/- 100 10.5 12 2.1 0.76 2.9 3.66 15.3 1.2 5.2 18.4 Ω ... |
Document |
IRF7807D1PBF Data Sheet
PDF 171.05KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF7807D1 |
International Rectifier |
MOSFET | |
2 | IRF7807D2 |
International Rectifier |
MOSFET | |
3 | IRF7807D2PbF |
International Rectifier |
MOSFET / SCHOTTKY DIODE | |
4 | IRF7807 |
International Rectifier |
N-Channel Power MOSFET | |
5 | IRF7807A |
International Rectifier |
N-Channel Power MOSFET |