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IRF7807APbF |
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| Part Number | IRF7807APbF |
| Manufacturer | International Rectifier |
| Description | These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for h... |
| Features |
IRF7807 IRF7807A
Vds 30V 30V
Rds(on) 25mΩ 25mΩ
Qg 17nC 17nC
Qsw
5.2nC
Qoss 16.8nC 16.8nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (VGS ≥ 4.5V) Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
Symbol VDS VGS I
D
IDM PD
TJ, TSTG I
S
ISM
IRF7807
IRF7807A
30
±12
8.3 8.3
6.6 6.6
66 66
2.5
1.6
–55 to 150 2.5 2.5 66 66 Units V A W °C A Thermal Resistance Parameter Maximum Junction-to-Ambi... |
| Document |
 IRF7807APbF Data Sheet
PDF 199.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF7807APbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters |
|
| 2 | IRF7807A |
International Rectifier |
N-Channel Power MOSFET |
|
| 3 | IRF7807ATRPbF-1 |
International Rectifier |
HEXFET Chip-Set for DC-DC Converters |
|
| 4 | IRF7807 |
International Rectifier |
N-Channel Power MOSFET |
|
| 5 | IRF7807D1 |
International Rectifier |
MOSFET |
|