IPP048N06LG - Infineon Technologies

IPP048N06LG Power-Transistor

www.DataSheet4U.com IPP048N06L G IPB048N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 4.4 100 V mΩ A Type IPP048N06L IPB048.

Features

• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 4.4 100 V mΩ A Type IPP048N06L IPB048N06L Package Marking P-TO220-3-1 048N06L P-TO263-3-2 048N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage Power dissipation Operating .