IPP040N06N3G - Infineon Technologies AG

IPP040N06N3G Power-Transistor

Type IPB037N06N3 G ™ IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • N-channel, normal level • Avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free plating; RoHS compliant • Hal.

Features

• for sync. rectification, drives and dc/dc SMPS
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• N-channel, normal level
• Avalanche rated
• Qualified according to JEDEC1) for target applications
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21 Type IPB037N06N3 G IPI040N06N3 G Product Summary V DS R DS(on),max (SMD) ID 60 3.7 90 V mΩ A previous engineering sample codes: IPP04xN06N IPI04xN06N IPB04xN06N IPP040N06N3 G Package Marking PG-TO263-3 037N06N PG-TO262-3 040N06N PG-TO220-3 040N06N Maximum ratings, at T j=25 °C, unle.