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IPP048N06LG |
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| Part Number | IPP048N06LG |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | www.DataSheet4U.com IPP048N06L G IPB048N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating tem... |
| Features |
• For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 4.4 100 V mΩ A Type IPP048N06L IPB048N06L Package Marking P-TO220-3-1 048N06L P-TO263-3-2 048N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage Power dissipation Operating ... |
| Document |
 IPP048N06LG Data Sheet
PDF 466.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP048N06L |
Infineon |
Power-Transistor |
|
| 2 | IPP048N04N |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPP048N12N3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPP048N12N3 |
Infineon |
Power-Transistor |
|
| 5 | IPP048N12N3G |
Infineon |
Power-Transistor |
|