Type !"#$%!&™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free ac.
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID
Type
IPB041N04N G
IPP041N04N G
IPP041N04N G IPB041N04N G
40 V 4.1 mW 80 A
Package Marking
PG-TO263-3 041N04N
PG-TO220-3 041N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Condit.
isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·En.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP041N04NG |
Infineon Technologies |
Power-Transistor | |
2 | IPP041N12N3 |
Infineon |
Power Transistor | |
3 | IPP041N12N3 |
INCHANGE |
N-Channel MOSFET | |
4 | IPP041N12N3G |
Infineon Technologies AG |
Power-Transistor | |
5 | IPP040N06N |
Infineon Technologies |
Power-Transistor | |
6 | IPP040N06N |
INCHANGE |
N-Channel MOSFET | |
7 | IPP040N06N3 |
INCHANGE |
N-Channel MOSFET | |
8 | IPP040N06N3 |
Infineon |
Power Transistor | |
9 | IPP040N06N3G |
Infineon Technologies AG |
Power-Transistor | |
10 | IPP040N06NF2S |
Infineon |
MOSFET | |
11 | IPP042N03L |
INCHANGE |
N-Channel MOSFET | |
12 | IPP042N03L |
Infineon |
Power-Transistor |