5>?;= 7MI[YMZ R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 I' ;I"">
$ $ " " "%&$!"#' $ ;B 1 ='=-: >5>?;= 7MI[YMZ R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 I' ;I"[# AC@ 5F4E!) ' R/ 6CJ =@ H @ ? C6D:DE2 ?46 ' ;I"[# $ =;0@/?& @9 9 -=D ) ;I ' -@ ?>2 I $; )*( K ,&0 Z" )(( 7 R U @ A6C2 E:?8 E6>A6C2 EFC6 R* 3 7C66 =62 5 A=2 E:?8 , @ # - 4@ >A=:2 ?E R+ F2 =:7:65 2 44@ C5:?8 E@ % )# 7.
* @ H6C5:DD:A2 E:@ ?
% aa
( 9 U
) A6C2 E:?8 2 ?5 DE@ C2 86 E6>A6C2 EFC6 ( W ( `aT
$ 4=:>2 E:4 42 E68@ CJ $( $
EITM )(( )(( ,(( /,(
.
r
*( +((
DVQ[ 7
ZA XK's` K L U
, 6G
A2 86
@IYIUM[MY
B`UJWT 4WVLQ[QWVZ
'41 =9 -8/4-=-/?1 =5>?5/>
.96C>2 =C6D:DE2 ?46 ;F?4E:@ ? 42 D6 ' aUA9
.96C>2 =C6D:DE2 ?46
' aUA7
;F?4E:@ ? 2 >3 :6?E
>:?:>2 =7@ @ EAC:?E 4>
* 4@ @ =:?8 2 C62 -#
$ $ "
"
EITMZ
DVQ[
UQV% [`X% UI_%
%
%
(&- B'L
%
%
,(
81 /?=5/-8/4-=-/?1 =5>?5/> 2 E( W U F?=6DD@ E96CH:D6 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP048N12N3 |
INCHANGE |
N-Channel MOSFET | |
2 | IPP048N12N3 |
Infineon |
Power-Transistor | |
3 | IPP048N04N |
INCHANGE |
N-Channel MOSFET | |
4 | IPP048N06L |
Infineon |
Power-Transistor | |
5 | IPP048N06LG |
Infineon Technologies |
Power-Transistor | |
6 | IPP040N06N |
Infineon Technologies |
Power-Transistor | |
7 | IPP040N06N |
INCHANGE |
N-Channel MOSFET | |
8 | IPP040N06N3 |
INCHANGE |
N-Channel MOSFET | |
9 | IPP040N06N3 |
Infineon |
Power Transistor | |
10 | IPP040N06N3G |
Infineon Technologies AG |
Power-Transistor | |
11 | IPP040N06NF2S |
Infineon |
MOSFET | |
12 | IPP041N04N |
Infineon |
Power Transistor |