isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP048N04N,IIPP048N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications .
·Static drain-source on-resistance:
RDS(on) ≤4.8mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
40
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
70
IDM
Drain Current-Single Pulsed
400
PD
Total Dissipation @TC=25℃
79
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP048N06L |
Infineon |
Power-Transistor | |
2 | IPP048N06LG |
Infineon Technologies |
Power-Transistor | |
3 | IPP048N12N3 |
INCHANGE |
N-Channel MOSFET | |
4 | IPP048N12N3 |
Infineon |
Power-Transistor | |
5 | IPP048N12N3G |
Infineon |
Power-Transistor | |
6 | IPP040N06N |
Infineon Technologies |
Power-Transistor | |
7 | IPP040N06N |
INCHANGE |
N-Channel MOSFET | |
8 | IPP040N06N3 |
INCHANGE |
N-Channel MOSFET | |
9 | IPP040N06N3 |
Infineon |
Power Transistor | |
10 | IPP040N06N3G |
Infineon Technologies AG |
Power-Transistor | |
11 | IPP040N06NF2S |
Infineon |
MOSFET | |
12 | IPP041N04N |
Infineon |
Power Transistor |