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isc N-Channel MOSFET Transistor IPP048N12N3，IIPP048N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAX.
·Static drain-source on-resistance:
RDS(on) ≤4.8mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
· Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
120
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
100
IDM
Drain Current-Single Pulsed
400
PD
Total Dissipation @TC=25℃
300
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT.
IPP048N12N3 - Infineon
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP048N12N3G |
Infineon |
Power-Transistor |
|
| 2 | IPP048N04N |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPP048N06L |
Infineon |
Power-Transistor |
|
| 4 | IPP048N06LG |
Infineon Technologies |
Power-Transistor |
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| 5 | IPP040N06N |
Infineon Technologies |
Power-Transistor |
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| 6 | IPP040N06N |
INCHANGE |
N-Channel MOSFET |
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| 7 | IPP040N06N3 |
INCHANGE |
N-Channel MOSFET |
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| 8 | IPP040N06N3 |
Infineon |
Power Transistor |
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| 9 | IPP040N06N3G |
Infineon Technologies AG |
Power-Transistor |
|
| 10 | IPP040N06NF2S |
Infineon |
MOSFET |
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| 11 | IPP041N04N |
Infineon |
Power Transistor |
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| 12 | IPP041N04N |
INCHANGE |
N-Channel MOSFET |
|