OptiMOS®-P2 Power-Transistor Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD70P04P4L-08 Product Summary V DS R DS(on) ID -40 V 7.8 mW -70 A PG-TO252-3-313 Type IPD70P04P4L-08 Package Marking PG-TO252-3-313 4P.
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD70P04P4L-08
Product Summary V DS R DS(on) ID
-40 V 7.8 mW -70 A
PG-TO252-3-313
Type IPD70P04P4L-08
Package
Marking
PG-TO252-3-313 4P04L08
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=-10V
T C=100°C, V GS=-10V1)
Pulsed drain current1) Avalanche energy, single pulse1)
I D,pulse E AS
T C=25°C I D=-35A
Avalanche curr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPD70P04P4-09 |
Infineon Technologies |
Power-Transistor | |
2 | IPD70N03S4L-04 |
Infineon Technologies |
Power-Transistor | |
3 | IPD70N04S3-07 |
Infineon Technologies |
Power-Transistor | |
4 | IPD70N10S3-12 |
Infineon Technologies |
Power Transistor | |
5 | IPD70N10S3L-12 |
Infineon Technologies |
Power-Transistor | |
6 | IPD70R1K4CE |
Infineon |
MOSFET | |
7 | IPD70R1K4CE |
INCHANGE |
N-Channel MOSFET | |
8 | IPD70R1K4P7S |
Infineon |
MOSFET | |
9 | IPD70R2K0CE |
Infineon |
MOSFET | |
10 | IPD70R2K0CE |
INCHANGE |
N-Channel MOSFET | |
11 | IPD70R360P7S |
Infineon |
MOSFET | |
12 | IPD70R600CE |
Infineon |
MOSFET |