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IPD70P04P4L-08 |
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| Part Number | IPD70P04P4L-08 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | OptiMOS®-P2 Power-Transistor Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% ... |
| Features |
• P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD70P04P4L-08 Product Summary V DS R DS(on) ID -40 V 7.8 mW -70 A PG-TO252-3-313 Type IPD70P04P4L-08 Package Marking PG-TO252-3-313 4P04L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V1) Pulsed drain current1) Avalanche energy, single pulse1) I D,pulse E AS T C=25°C I D=-35A Avalanche curr... |
| Document |
 IPD70P04P4L-08 Data Sheet
PDF 149.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD70P04P4-09 |
Infineon Technologies |
Power-Transistor |
|
| 2 | IPD70N03S4L-04 |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPD70N04S3-07 |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPD70N10S3-12 |
Infineon Technologies |
Power Transistor |
|
| 5 | IPD70N10S3L-12 |
Infineon Technologies |
Power-Transistor |
|