Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . . . . 1 Maximum ratings 3 Thermal characteristics .
•ExtremelylowlossesduetoverylowFOMRDS(on)
*QgandRDS(on)
*Eoss
•Excellentthermalbehavior
•IntegratedESDprotectiondiode
•Lowswitchinglosses(Eoss)
•Productvalidationacc.JEDECStandard
Benefits
•Costcompetitivetechnology
•Lowertemperature
•HighESDruggedness
•Enablesefficiencygainsathigherswitchingfrequencies
•Enableshighpowerdensitydesignsandsmallformfactors
Potentialapplications
RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsontheg.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD70R1K4CE |
Infineon |
MOSFET |
|
| 2 | IPD70R1K4CE |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPD70R2K0CE |
Infineon |
MOSFET |
|
| 4 | IPD70R2K0CE |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPD70R360P7S |
Infineon |
MOSFET |
|
| 6 | IPD70R600CE |
Infineon |
MOSFET |
|
| 7 | IPD70R600CE |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPD70R600P7S |
Infineon |
MOSFET |
|
| 9 | IPD70R900P7S |
Infineon |
Power-Transistor |
|
| 10 | IPD70R950CE |
Infineon |
MOSFET |
|
| 11 | IPD70R950CE |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IPD70N03S4L-04 |
Infineon Technologies |
Power-Transistor |
|