IPD70P04P4-09 - Infineon Technologies

IPD70P04P4-09 Power-Transistor

OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD70P04P4-09 Product Summary V DS R DS(on) ID -40 V 8.9 mΩ -73 A PG-TO252-3-313 Type IPD70P04P4-09 Package Marking PG-TO252-3-313 4P0.

Features

• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested IPD70P04P4-09 Product Summary V DS R DS(on) ID -40 V 8.9 mΩ -73 A PG-TO252-3-313 Type IPD70P04P4-09 Package Marking PG-TO252-3-313 4P0409 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=-36A Avalanche curren.