IPD70N03S4L-04 - Infineon Technologies

IPD70N03S4L-04 Power-Transistor

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested IPD70N03S4L-04 Product Summary V DS R DS(on),max ID 30 V 4.3 mΩ 70 A PG-TO252-3-11 Type IPD70N03S4L-04 Package Mar.

Features

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested IPD70N03S4L-04 Product Summary V DS R DS(on),max ID 30 V 4.3 mΩ 70 A PG-TO252-3-11 Type IPD70N03S4L-04 Package Marking PG-TO252-3-11 4N03L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E A.