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isc N-Channel MOSFET Transistor IPD70R1K4CE,IIPD70R1K4CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .
·Static drain-source on-resistance:
RDS(on)≤1.4Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Fast switching
·Very high commutation ruggedness
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
700
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
5.4
IDM
Drain Current-Single Pulsed
8.3
PD
Total Dissipation @TC=25℃
53
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-40~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
.
IPD70R1K4CE - Infineon
IPD70R1K4CE,IPS70R1K4CE MOSFET 700VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvolta.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPD70R1K4P7S |
Infineon |
MOSFET |
|
| 2 | IPD70R2K0CE |
Infineon |
MOSFET |
|
| 3 | IPD70R2K0CE |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPD70R360P7S |
Infineon |
MOSFET |
|
| 5 | IPD70R600CE |
Infineon |
MOSFET |
|
| 6 | IPD70R600CE |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPD70R600P7S |
Infineon |
MOSFET |
|
| 8 | IPD70R900P7S |
Infineon |
Power-Transistor |
|
| 9 | IPD70R950CE |
Infineon |
MOSFET |
|
| 10 | IPD70R950CE |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IPD70N03S4L-04 |
Infineon Technologies |
Power-Transistor |
|
| 12 | IPD70N04S3-07 |
Infineon Technologies |
Power-Transistor |
|