IPD70N10S3L-12 - Infineon Technologies

IPD70N10S3L-12 Power-Transistor

OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPD70N10S3L-12 Product Summary VDS RDS(on),max I D 100 V 11.5 mW 70 A PG-TO252-3-11 Type Package Marking IPD70N10S3L-12 PG-TO252-3-11 QN10L12 Maximu.

Features

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• RoHS compliant
• 100% Avalanche tested IPD70N10S3L-12 Product Summary VDS RDS(on),max I D 100 V 11.5 mW 70 A PG-TO252-3-11 Type Package Marking IPD70N10S3L-12 PG-TO252-3-11 QN10L12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=35A Avalanche current, single p.