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The HMJE13001 is a medium power transistor designed for use in switching applications. Features • High breakdown voltage • Low collector saturation voltage • Fast switching speed TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
TO-92
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature .... -55 ~ +150 °C Junction Temperature ...... +150 °C
• Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...
HMJE13001 - Unisonic
UTC MJE13001 FEATURES * Collector-Base Voltage: V(BR)CBO=600V * Collector Current: IC=0.2A NPN EPITAXIAL SILICON TRANSI.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HMJE13003 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | HMJE13003D |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 3 | HMJE13003T |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 4 | HMJE13005 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 5 | HMJE13007 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 6 | HMJE13007A |
Hi-Sincerity |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 7 | HMJE2955T |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 8 | HMJE3055T |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 9 | HMJ1 |
WJ Communication |
High Dynamic Range FET Mixer |
|
| 10 | HMJ2 |
WJ Communication |
High Dynamic Range FET Mixer |
|
| 11 | HMJ4 |
ETC |
High Dynamic Range FET Mixer |
|
| 12 | HMJ5 |
ETC |
High Dynamic Range FET Mixer |
|
