• High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits TO-126 Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature .. -50 ~ +150 °C Junction Temperature.
.... 400 V VEBO Emitter to Base Voltage ... 9 V IC Collector Current .... Continuous 1.5 A IB Base Current .. Continuous 0.75 A
Characteristics (Ta=25°C)
Symbol
Min. Typ.
BVCEX BVCEO
IEBO ICEX
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(sat)
*hFE1
*.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HMJE13001 |
Hi-Sincerity |
NPN Triple Diffused Planar Type High Voltage Transistor | |
2 | HMJE13001 |
Forward Holdings |
High Voltage Transistor | |
3 | HMJE13001 |
Unisonic |
NPN Epitaxial Silicon Transistor | |
4 | HMJE13003D |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
5 | HMJE13003T |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
6 | HMJE13005 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
7 | HMJE13007 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
8 | HMJE13007A |
Hi-Sincerity |
NPN EPITAXIAL PLANAR TRANSISTOR | |
9 | HMJE2955T |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR | |
10 | HMJE3055T |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
11 | HMJ1 |
WJ Communication |
High Dynamic Range FET Mixer | |
12 | HMJ2 |
WJ Communication |
High Dynamic Range FET Mixer |