The HMJE2955T is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 • Maximum Temperatures Storage Temperature ... -55 ~ +150 °C Junction Temperature ...........
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HMJE13001 |
Hi-Sincerity |
NPN Triple Diffused Planar Type High Voltage Transistor | |
2 | HMJE13001 |
Forward Holdings |
High Voltage Transistor | |
3 | HMJE13001 |
Unisonic |
NPN Epitaxial Silicon Transistor | |
4 | HMJE13003 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
5 | HMJE13003D |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
6 | HMJE13003T |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
7 | HMJE13005 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
8 | HMJE13007 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
9 | HMJE13007A |
Hi-Sincerity |
NPN EPITAXIAL PLANAR TRANSISTOR | |
10 | HMJE3055T |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
11 | HMJ1 |
WJ Communication |
High Dynamic Range FET Mixer | |
12 | HMJ2 |
WJ Communication |
High Dynamic Range FET Mixer |