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The HMJ4 is a high dynamic range, GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +36 dBm at an LO drive level of +17 dBm. The HMJ4 comes in a low cost, J-lead package. Typical applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in communications systems. .
• +36 dBm IIP3
• No External Matching Elements
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Product Description
The HMJ4 is a high dynamic range, GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +36 dBm at an LO drive level of +17 dBm. The HMJ4 comes in a low cost, J-lead package. Typical applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in communications systems.
Functional Diagram
18 17 16 15 14 13 12 11 10
Required RF 1700-1880 MHz LO 1550-1830 MHz IF 50-150 MHz +17 dBm Drive Level +3V Bias (18 mA) Low Cost Surface Mo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HMJ1 |
WJ Communication |
High Dynamic Range FET Mixer |
|
| 2 | HMJ2 |
WJ Communication |
High Dynamic Range FET Mixer |
|
| 3 | HMJ5 |
ETC |
High Dynamic Range FET Mixer |
|
| 4 | HMJ7 |
ETC |
The Communications Edge |
|
| 5 | HMJ7-1 |
WJ Communication |
High Dynamic Range FET Mixer |
|
| 6 | HMJ8 |
WJ Communication |
High Dynamic Range FET Mixer |
|
| 7 | HMJ9 |
WJ Communication |
The Communications Edge |
|
| 8 | HMJE13001 |
Hi-Sincerity |
NPN Triple Diffused Planar Type High Voltage Transistor |
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| 9 | HMJE13001 |
Forward Holdings |
High Voltage Transistor |
|
| 10 | HMJE13001 |
Unisonic |
NPN Epitaxial Silicon Transistor |
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| 11 | HMJE13003 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
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| 12 | HMJE13003D |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|