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The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-126 Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature .........
• High Speed Switching
• Low Saturation Voltage
• High Reliability
TO-126
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures Storage Temperature . -50 ~ +150 °C Junction Temperature +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 3.5 W Total Power Dissipation (Tc=25°C) ....
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HMJE13003 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | HMJE13003D |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 3 | HMJE13001 |
Hi-Sincerity |
NPN Triple Diffused Planar Type High Voltage Transistor |
|
| 4 | HMJE13001 |
Forward Holdings |
High Voltage Transistor |
|
| 5 | HMJE13001 |
Unisonic |
NPN Epitaxial Silicon Transistor |
|
| 6 | HMJE13005 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 7 | HMJE13007 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 8 | HMJE13007A |
Hi-Sincerity |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 9 | HMJE2955T |
Hi-Sincerity Mocroelectronics |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 10 | HMJE3055T |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 11 | HMJ1 |
WJ Communication |
High Dynamic Range FET Mixer |
|
| 12 | HMJ2 |
WJ Communication |
High Dynamic Range FET Mixer |
|