HMJE13001 |
Part Number | HMJE13001 |
Manufacturer | Unisonic |
Description | UTC MJE13001 FEATURES * Collector-Base Voltage: V(BR)CBO=600V * Collector Current: IC=0.2A NPN EPITAXIAL SILICON TRANSISTOR 1 TO-92 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAME... |
Features |
* Collector-Base Voltage: V(BR)CBO=600V * Collector Current: IC=0.2A
NPN EPITAXIAL SILICON TRANSISTOR
1
TO-92
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Ic Pc Tj TSTG
RATING
600 400 7 200 750 150 -55 ~ +150
UNIT
V V V mA mW °C °C
ELECTRICAL CHARACTERISTICS (Tc=25°C)
PARAMETER
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector C... |
Document |
HMJE13001 Data Sheet
PDF 91.48KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HMJE13001 |
Hi-Sincerity |
NPN Triple Diffused Planar Type High Voltage Transistor | |
2 | HMJE13001 |
Forward Holdings |
High Voltage Transistor | |
3 | HMJE13003 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
4 | HMJE13003D |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
5 | HMJE13003T |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |