HMJE13001 Unisonic NPN Epitaxial Silicon Transistor Datasheet, en stock, prix

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HMJE13001

Unisonic
HMJE13001
HMJE13001 HMJE13001
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Part Number HMJE13001
Manufacturer Unisonic
Description UTC MJE13001 FEATURES * Collector-Base Voltage: V(BR)CBO=600V * Collector Current: IC=0.2A NPN EPITAXIAL SILICON TRANSISTOR 1 TO-92 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAME...
Features * Collector-Base Voltage: V(BR)CBO=600V * Collector Current: IC=0.2A NPN EPITAXIAL SILICON TRANSISTOR 1 TO-92 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Pc Tj TSTG RATING 600 400 7 200 750 150 -55 ~ +150 UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Tc=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector C...

Document Datasheet HMJE13001 Data Sheet
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