The HMJ1 is a high dynamic range, GaAs FET mixer. This active FET realizes a typical third order intercept point of +39 dBm at an LO drive level of +17 dBm. The HMJ1 comes in a low cost, J-lead package. Typical applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in cellular communications systems.
• +39 dBm IIP3
• No External Matching Elements
•
•
•
•
•
•
Product Description
The HMJ1 is a high dynamic range, GaAs FET mixer. This active FET realizes a typical third order intercept point of +39 dBm at an LO drive level of +17 dBm. The HMJ1 comes in a low cost, J-lead package. Typical applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in cellular communications systems.
Functional Diagram
Required RF 750-1000 MHz LO 680-980 MHz IF 20-100 MHz +17 dBm Drive Level +3V Bias (23 mA) Low-Cost Surface Mount J-Lead Package
Specifi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HMJ2 |
WJ Communication |
High Dynamic Range FET Mixer | |
2 | HMJ4 |
ETC |
High Dynamic Range FET Mixer | |
3 | HMJ5 |
ETC |
High Dynamic Range FET Mixer | |
4 | HMJ7 |
ETC |
The Communications Edge | |
5 | HMJ7-1 |
WJ Communication |
High Dynamic Range FET Mixer | |
6 | HMJ8 |
WJ Communication |
High Dynamic Range FET Mixer | |
7 | HMJ9 |
WJ Communication |
The Communications Edge | |
8 | HMJE13001 |
Hi-Sincerity |
NPN Triple Diffused Planar Type High Voltage Transistor | |
9 | HMJE13001 |
Forward Holdings |
High Voltage Transistor | |
10 | HMJE13001 |
Unisonic |
NPN Epitaxial Silicon Transistor | |
11 | HMJE13003 |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR | |
12 | HMJE13003D |
Hi-Sincerity Mocroelectronics |
NPN EPITAXIAL PLANAR TRANSISTOR |