HAT2210R - Renesas Technology

HAT2210R Silicon N-Channel Power MOSFET

Data Sheet HAT2210R Silicon N Channel Power MOSFET with Schottky Barrier Diode High Speed Power Switching R07DS1368EJ0301 Rev.3.01 Jan 20, 2017 Features  Low on-resistance  Capable of 4.5 V gate drive  High density mounting  Built-in Schottky Barrier Diode Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 78 DD 56 DD .

Features

 Low on-resistance
 Capable of 4.5 V gate drive
 High density mounting
 Built-in Schottky Barrier Diode Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 78 DD 56 DD 1234 2 4 G G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S 1 MOS1 S 3 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 MOS1 30 ±20 7.5 60 7.5 1.5 MOS2 & SBD 30 ±12 8.0 64 8.0 1.5 Channel tem.