HAT2210R Renesas Technology Silicon N-Channel Power MOSFET Datasheet, en stock, prix

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HAT2210R
Renesas Technology
HAT2210R
HAT2210R HAT2210R
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Part Number HAT2210R
Manufacturer Renesas (https://www.renesas.com/) Technology
Description Data Sheet HAT2210R Silicon N Channel Power MOSFET with Schottky Barrier Diode High Speed Power Switching R07DS1368EJ0301 Rev.3.01 Jan 20, 2017 Features  Low on-resistance  Capable of 4.5 V gate d...
Features
 Low on-resistance
 Capable of 4.5 V gate drive
 High density mounting
 Built-in Schottky Barrier Diode Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 78 DD 56 DD 1234 2 4 G G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S 1 MOS1 S 3 MOS2 and Schottky Barrier Diode Absolute Maximum Ratings Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 MOS1 30 ±20 7.5 60 7.5 1.5 MOS2 & SBD 30 ±12 8.0 64 8.0 1.5 Channel tem...

Document Datasheet HAT2210R Data Sheet
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