HAT2206C - Renesas Technology

HAT2206C Silicon N-Channel Power MOSFET

www.DataSheet4U.com HAT2206C Silicon N Channel MOS FET Power Switching REJ03G1238-0500 Rev.5.00 Jan 26, 2006 Features • Low on-resistance RDS (on) = 65 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DD D D 1. S.

Features

• Low on-resistance RDS (on) = 65 mΩ typ. (at VGS = 4.5 V)
• Low drive current.
• High density mounting
• 1.8 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DD D D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW .