HAT2204C - Renesas Technology

HAT2204C Silicon N-Channel Power MOSFET

www.DataSheet4U.com HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0500 Rev.5.00 May 10, 2007 Features • Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 2 3 4 5 DDD D 6 G 1..

Features

• Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V)
• Low drive current
• High density mounting
• 1.8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 2 3 4 5 DDD D 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Pch Note2 Tch Tstg Note1 Ratings 12 ±8 3..