HAT2201R Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 34 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0233-0301Z Rev.3.01 Nov.30.2016 Rev.3.01, Nov.30.2016,.
• Capable of 8 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 34 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
8 7 65
56 7 8 DD D D
1 234
4 G
SSS 12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
REJ03G0233-0301Z Rev.3.01
Nov.30.2016
Rev.3.01, Nov.30.2016, page 1 of 7
HAT2201R
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
100
Gate to source voltage
VGSS
±20
Drain current Drain peak current
ID
6
ID(pulse)Note1
48
Body-drain diode reverse drain current
IDR
6
Avalanche current
IAP Note 2
6
Avalanche energy
EAR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HAT2201WP |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
2 | HAT2200R |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
3 | HAT2200WP |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
4 | HAT2202C |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
5 | HAT2203C |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
6 | HAT2204C |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
7 | HAT2205C |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
8 | HAT2206C |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
9 | HAT2207C |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
10 | HAT2208R |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
11 | HAT2210R |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
12 | HAT2215R |
Renesas Technology |
Silicon N-Channel Power MOSFET |