HAT2200WP - Renesas Technology

HAT2200WP Silicon N-Channel Power MOSFET

HAT2200WP Silicon N Channel Power MOS FET Power Switching Features  Capable of 8 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 321 G Preliminary Datasheet REJ03G1678-0311 Rev.3.11 Nov.25.2016 5 678 D DDD 1, 2, .

Features

 Capable of 8 V gate drive
 Low drive current
 High density mounting
 Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 321 G Preliminary Datasheet REJ03G1678-0311 Rev.3.11 Nov.25.2016 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature S.