HAT2217C - Renesas Technology

HAT2217C Silicon N-Channel Power MOSFET

www.DataSheet4U.com HAT2217C Silicon N Channel MOS FET Power Switching REJ03G0449-0300 Rev.3.00 May 19.2005 Features • Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) 2 3 4 5 DDD D Index band 4 5 6 2 3 6 G.

Features

• Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V)
• Low drive current.
• High density mounting
• 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) 2 3 4 5 DDD D Index band 4 5 6 2 3 6 G 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Symbol VDSS VGSS ID ID (pulse)Note1 IDR Note 2 Ratings 60 +20 /
  –10 3 12 3 Unit V V A A A W °C °C Channel dissipation Pch 1.25 Chan.