HAT2200WP |
Part Number | HAT2200WP |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Description | HAT2200WP Silicon N Channel Power MOS FET Power Switching Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outl... |
Features |
Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 321 G Preliminary Datasheet REJ03G1678-0311 Rev.3.11 Nov.25.2016 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature S... |
Document |
HAT2200WP Data Sheet
PDF 339.62KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | HAT2200R |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
2 | HAT2201R |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
3 | HAT2201WP |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
4 | HAT2202C |
Renesas Technology |
Silicon N-Channel Power MOSFET | |
5 | HAT2203C |
Renesas Technology |
Silicon N-Channel Power MOSFET |