HAT2207C - Renesas Technology

HAT2207C Silicon N-Channel Power MOSFET

HAT2207C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1239-0600 Rev.6.00 Feb 28, 2006 23 45 DD DD 6 G S 1 1. Source 2.

Features

• Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 4.5 V)
• Low drive current.
• High density mounting
• 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1239-0600 Rev.6.00 Feb 28, 2006 23 45 DD DD 6 G S 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID (pulse)Note1 Body - Drain diode reverse drain current Channel dissipation IDR PchNote 2 Channel temperature Tch .