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H5N2305PF |
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| Part Number | H5N2305PF |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | H5N2305PF Silicon N Channel MOS FET High Speed Power Switching REJ03G0026-0200Z Rev.2.00 Jun.25.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Out... |
| Features |
• Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline TO-3PFM D G 1 S 1. Gate 2. Drain 3. Source 2 3 Rev.2.00, Jun.25.2004, page 1 of 9 H5N2305PF Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 230 ±30 35 140 35 140 18 60 2.08 150 –55 to +150 Rating V V A A A A A W °C /W °C °C Unit Avalanche current IAP Note3 Channel dissipation Pch Note... |
| Document |
 H5N2305PF Data Sheet
PDF 123.86KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | H5N2306PF |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 2 | H5N2001LD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 3 | H5N2001LM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 4 | H5N2001LS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | H5N2003P |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|