FDS8935 - Fairchild Semiconductor

FDS8935 MOSFET

„ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A „ Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A „ High performance trench technology for extremely low rDS(on) „ This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. „ High power and c.

Features

General Description „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A „ Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A „ High performance trench technology for extremely low rDS(on) „ This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant Applications „ Load Switch „ Synchronous Rectifier D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 D2 55 D2 66 D1 77 D1 88 Q2 Q1.