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FDS8935 |
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| Part Number | FDS8935 |
| Manufacturer | Fairchild Semiconductor |
| Description | Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) This P-channel MOSFET is produ... |
| Features |
General Description
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on)
This P-channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for rDS(on), switching performance and ruggedness.
High power and current handling capability in a widely used surface mount package
100% UIL Tested RoHS Compliant
Applications
Load Switch Synchronous Rectifier
D2 D1 D1
D2
Pin 1
G2 S2 G1 S1
D2 55 D2 66 D1 77 D1 88
Q2 Q1... |
| Document |
 FDS8935 Data Sheet
PDF 209.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS8934A |
Fairchild Semiconductor |
Dual P-Channel MOSFET |
|
| 2 | FDS8935 |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 3 | FDS8936A |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 4 | FDS8936S |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 5 | FDS89141 |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|