These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such a.
N-Channel 5.5 A,30 V, RDS(ON)=0.030 Ω @ VGS=4.5 V RDS(ON)=0.038 Ω @ VGS=2.5 V. P-Channel -4 A,-20 V, RDS(ON)=0.055 Ω @ VGS=-4.5 V RDS(ON)=0.072 Ω @ VGS=-2.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 6 7 4 3 2 1 S FD 8A 2 89 S2 G2 G1 8 SO-8 pin 1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Contin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS8926A |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
2 | FDS89141 |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
3 | FDS89161 |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
4 | FDS89161LZ |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
5 | FDS8934A |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
6 | FDS8935 |
Fairchild Semiconductor |
MOSFET | |
7 | FDS8935 |
ON Semiconductor |
Dual P-Channel MOSFET | |
8 | FDS8936A |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
9 | FDS8936S |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
10 | FDS8947A |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
11 | FDS8949 |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
12 | FDS8949 |
ON Semiconductor |
Dual N-Channel MOSFET |