These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-lin.
• Q1: N-Channel RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V
• Q2: P-Channel RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.0A, 30V
-5A, -30V
D1 D
D1 D
DD2 D2 D
5 6
Q2
4 3
Q1
SO-8
Pin 1 SO-8
G1 S1 S
G2 S2 G
7 8
2 1
S
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
TA = 25°C unless otherwise noted
Parameter
Q1
30
(Note 1a)
Q2
30 ±20 -5 -20 2 1.6 1 0.9 -55 to +150
Units
V V A W
- Continuous - Pu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS8958A |
Fairchild Semiconductor |
Dual-Channel MOSFET | |
2 | FDS8958A-F085 |
ON Semiconductor |
Dual N&P-Channel MOSFET | |
3 | FDS8958A_F085 |
Fairchild Semiconductor |
Dual N&P-Channel MOSFET | |
4 | FDS8958B |
Fairchild Semiconductor |
MOSFET | |
5 | FDS8958B |
ON Semiconductor |
Dual N & P-Channel Power MOSFET | |
6 | FDS89141 |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
7 | FDS89161 |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
8 | FDS89161LZ |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
9 | FDS8926A |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
10 | FDS8928A |
Fairchild Semiconductor |
Dual-Channel MOSFET | |
11 | FDS8934A |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
12 | FDS8935 |
Fairchild Semiconductor |
MOSFET |