FDS8936S - Fairchild Semiconductor

FDS8936S Dual N-Channel MOSFET

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive m.

Features

Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless other wise noted FDS8936S 30 ±20 (Note 1a) Units V V A 5 20 2 Power Dissipation for Dual Operation Power Dissipation for Single O.