FDS8949 - Fairchild Semiconductor

FDS8949 Dual N-Channel MOSFET

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are.

Features

„ Max rDS(on) = 29mΩ at VGS = 10V „ Max rDS(on) = 36mΩ at VGS = 4.5V „ Low gate charge „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant tm General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are re.