SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook com.
6 A, 30 V. R DS(ON) = 0.028 Ω @ VGS = 10 V, RDS(ON) = 0.040 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 4 3 2 1 S FD 6A 3 89 pin 1 6 G2 7 8 SO-8 S1 G1 S2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless otherwise noted FDS8936A 30 ±20 (Note 1a) Units V V A 6 20 2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS8936S |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
2 | FDS8934A |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
3 | FDS8935 |
Fairchild Semiconductor |
MOSFET | |
4 | FDS8935 |
ON Semiconductor |
Dual P-Channel MOSFET | |
5 | FDS89141 |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
6 | FDS89161 |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
7 | FDS89161LZ |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
8 | FDS8926A |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
9 | FDS8928A |
Fairchild Semiconductor |
Dual-Channel MOSFET | |
10 | FDS8947A |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
11 | FDS8949 |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
12 | FDS8949 |
ON Semiconductor |
Dual N-Channel MOSFET |