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Shielded Gate MOSFET Technology Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using ON Se.
General Description Shielded Gate MOSFET Technology Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Applications DC/DC Converters and Off-Line UPS.
FDS86240 - Fairchild Semiconductor
Shielded Gate MOSFET Technology Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS = 6 V,.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS86242 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 2 | FDS86242 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 3 | FDS86252 |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDS86106 |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FDS86140 |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FDS86141 |
Fairchild Semiconductor |
MOSFET |
|
| 7 | FDS86141 |
ON Semiconductor |
N-Channel MOSFET |
|
| 8 | FDS8638 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 9 | FDS86540 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 10 | FDS8670 |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET |
|
| 11 | FDS8672S |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | FDS8672S |
ON Semiconductor |
N-Channel MOSFET |
|