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FDS86240 |
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| Part Number | FDS86240 |
| Manufacturer | Fairchild Semiconductor |
| Description | Shielded Gate MOSFET Technology Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A High Performance Trench Technology for Extremely Low rDS(on) Hig... |
| Features |
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A High Performance Trench Technology for Extremely Low
rDS(on) High Power and Current Handling Capability in a Widely Used
Surface Mount Package
100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using ON Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Applications
DC/DC Converters and Off-Line UPS... |
| Document |
 FDS86240 Data Sheet
PDF 241.01KB |
| Distributor | Stock | Price | Buy |
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