This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate dri.
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• 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 Ω typical) RoHS Compliant
Applications
• High Efficiency DC-DC Converters:
• Notebook Vcore Power Supply
• Telecom Brick Synchronous Rectifier
• Multi purpose Point Of Load
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D
D
D
D
5 6
4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS ID PD VGSS Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed Power Dissipat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS8672S |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDS8672S |
ON Semiconductor |
N-Channel MOSFET | |
3 | FDS86106 |
Fairchild Semiconductor |
MOSFET | |
4 | FDS86140 |
Fairchild Semiconductor |
MOSFET | |
5 | FDS86141 |
Fairchild Semiconductor |
MOSFET | |
6 | FDS86141 |
ON Semiconductor |
N-Channel MOSFET | |
7 | FDS86240 |
Fairchild Semiconductor |
MOSFET | |
8 | FDS86240 |
ON Semiconductor |
N-Channel MOSFET | |
9 | FDS86242 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET | |
10 | FDS86242 |
ON Semiconductor |
N-Channel Power MOSFET | |
11 | FDS86252 |
Fairchild Semiconductor |
MOSFET | |
12 | FDS8638 |
Fairchild Semiconductor |
N-Channel MOSFET |