FDS86252 - Fairchild Semiconductor

FDS86252 MOSFET

„ Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A „ Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power .

Features

General Description „ Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A „ Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance. Application „ DC-DC Conversion D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S .