FDS86106 - Fairchild Semiconductor

FDS86106 MOSFET

„ Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A „ Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Powe.

Features

General Description „ Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A „ Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications „ Synchronous Rectifier „ Primary Switch For Bridge Topology D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S .