Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance .
General Description Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance. Applications DC-DC Conversion D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EA.
FDS86141 - ON Semiconductor
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A High performance trench .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS86140 |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDS86106 |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FDS86240 |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDS86240 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDS86242 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 6 | FDS86242 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 7 | FDS86252 |
Fairchild Semiconductor |
MOSFET |
|
| 8 | FDS8638 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 9 | FDS86540 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 10 | FDS8670 |
Fairchild Semiconductor |
30V N-Channel PowerTrench MOSFET |
|
| 11 | FDS8672S |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | FDS8672S |
ON Semiconductor |
N-Channel MOSFET |
|