FDS8638 - Fairchild Semiconductor

FDS8638 N-Channel MOSFET

March 2009 „ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-st.

Features

General Description March 2009 „ Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 5.4 mΩ at VGS = 4.5 V, ID = 16 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications „ Synchronous Rectifier „ Load Switch D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless othe.